Tech Engineering for the year , and Energy Conversion Devices, Inc. This phase change technology uses a thermally activated, rapid, reversible change in the structure of the alloy to store data. Since the binary information is represented by two different phases of the material it is inherently non-volatile, requiring no energy to keep the material in either of its two stable structural states.
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Tech Engineering for the year , and Energy Conversion Devices, Inc. This phase change technology uses a thermally activated, rapid, reversible change in the structure of the alloy to store data.
Since the binary information is represented by two different phases of the material it is inherently non-volatile, requiring no energy to keep the material in either of its two stable structural states. Introduction We are now living in a world driven by various electronic equipments. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers.
Semi conductors consist of array of transistors with each transistor being a simple switch between electrical 0 and 1. If scaling is to continue to and below the 65nm node, alternatives to CMOS designs will be needed to provide a path to device scaling beyond the end of the roadmap. However, these emerging research technologies will be faced with an uphill technology challenge.
One of the fundamental approaches to manage this challenge is using new materials to build the next generation transistors. Fundamental Ideas Of Emerging Memories The fundamental idea of all these technologies is the bistable nature possible for of the selected material.
FeRAM works on the basis of the bistable nature of the centre atom of selected crystalline material. A voltage is applied upon the crystal, which in turn polarizes the internal dipoles up or down. Abstract Nowadays, digital memories are used in each and every fields of day-to-day life. But now we are entering an era of material limited scaling. Continuous scaling has required the introduction of new materials.
Conclusion Unlike conventional flash memory Ovonic unified memory can be randomly addressed. OUM cell can be written 10 trillion times when compared with conventional flash memory. OUM requires fewer steps in an IC manufacturing process resulting in reduced cycle times, fewer defects, and greater manufacturing flexibility.
Ovonic Unified Memory Seminar pdf Report and ppt
Shruthi k. For digital application, challenges include exponentially increasing leakage current, short channel effects , etc. PowerPoint Presentation: Ovonic Unified Memory OUM is the nonvolatile memory that utilizes a reversible structural phase change between amorphous and polycrystalline states in a GeSbTe chalcogenide alloy material. For RF application, challenges include low noise figure, sustained linearity ,transistor matching, power added efficiency, etc. Ovshinsky of Energy Conversion Devices first explored the properties of chalcogenide glasses as a potential memory technology.
Background[ edit ] In the s, Calvin Tiebusch of Energy Conversion Devices first explored the properties of chalcogenide glasses as a potential memory technology. In , Charles Sie published a dissertation,   at Iowa State University that both described and demonstrated the feasibility of a phase-change-memory device by integrating chalcogenide film with a diode array. A cinematographic study in established that the phase-change-memory mechanism in chalcogenide glass involves electric-field-induced crystalline filament growth. However, material quality and power consumption issues prevented commercialization of the technology. More recently, interest and research have resumed as flash and DRAM memory technologies are expected to encounter scaling difficulties as chip lithography shrinks.